Powerful and Efficient Rohm Semiconductor Mosfet-Array for High-Voltage Applications

The Rohm Semiconductor SH8M13TB1 Mosfet-Array is a powerful and efficient solution for high-voltage applications. With its N and P channels, this device delivers superior power and efficiency for a wide range of applications.

One of the key features of the SH8M13TB1 is its maximum drain-source voltage of 30V, which makes it ideal for high-voltage applications. In addition, its continuous drain current of 6A to 7A ensures that it can handle high levels of power with ease.

Another important feature of the SH8M13TB1 is its gate source threshold voltage of 2.5V @ 1mA. This ensures optimal control and reliability, making it a dependable solution for demanding applications.

The SH8M13TB1 is also a surface mount type 8-SOP device, which means it can be easily mounted on a circuit board. This makes it a convenient solution for applications where space is at a premium.

Overall, the Rohm Semiconductor SH8M13TB1 Mosfet-Array is an excellent choice for high-voltage applications that require superior power and efficiency. Its N and P channels, 30V maximum drain-source voltage, and 6A to 7A continuous drain current make it a versatile solution for a wide range of applications. Its gate source threshold voltage of 2.5V @ 1mA ensures optimal control and reliability, and its surface mount type 8-SOP design makes it a convenient and space-saving solution.