Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.
Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.
Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.
Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.
Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.
Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.

Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.

To Be Negociated
Module Number
SH8M13TB1
Place of Origin
Shenzhen, Guangdong, China
Shipping
Air Freight, Ocean Freight, Land Freight

Product Description

Overview

Drain-Source Voltage (Vdss)
30v
Continuous Drain Current (Id) (25°c)
6a,7a
Gate Source Threshold Voltage
2.5v @ 1ma

Product Details

Parameter

Attribute value

Leakage source conduction resistance

31mΩ @ 6A,10V;29mΩ @ 7A,10V

Maximum power dissipation (Ta=25 ° C)

2W

Types of

N channel and P channel

Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.Rohm SH8M13TB1 SOP-8 MOS (Field-effect transistor) discrete semiconductor.

Trading Area

Global

Quotation

Name
Company
Phone
Email Address
Requirements
Quotation
Guangdong, China
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