Overview
| brand | ON | model | NTHL099N60S5 |
| Batch number | New batch number | encapsulation | TO-247-3 |
| Transistor polarity | N-Channel | Number of channels | 1 Channel |
| Vds - drain source breakdown voltage | 600 V | Id - Continuous drain current | 33 A |
| Rds On - Leakage Source Conduction Resistance | 99 mOhms | quantity | thirty thousand |
| Vgs - gate source voltage | -30 V,+30 V | Vgs th gate source threshold voltage | 4 V |
| Qg gate charge | 48 nC | Minimum operating temperature | -55 C |
| Maximum operating temperature | :+150 C | ||
Product Details
Product Attribute Value Selection Attribute
Manufacturer: onsemi
Product type: MOSFET
RoHS: Details
Technology: Si
Installation style: Through Hole
Packaging/Box: TO-247-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds drain source breakdown voltage: 600 V
Id - Continuous drain current: 33 A
Rds On Leakage Source Conduction Resistance: 99 mOhms
Vgs gate source voltage: -30 V,+30 V
Vgs th gate source threshold voltage: 4 V
Qg gate charge: 48 nC
Minimum operating temperature: -55 C
Maximum operating temperature:+150 C
Pd - Power dissipation: 184 W
Channel mode: Enhancement
Packaging: Tube
Trademark: onsemi
Product type: MOSFET
thirty
Subcategory: MOSFETs
Trading Area
Global