Overview
| brand | Infineon | model | IRLML6402TRPBF |
| type | Leakage source voltage (Vdss) | ||
| Continuous drain current (Id) | Power (Pd) | ||
| Conduction resistance | Threshold voltage (Vgs (th) @ Id) | ||
| Gate charge（ Qg@Vgs ） | Input capacitance（ Ciss@Vds ） | ||
| Reverse transmission capacitor（ Crss@Vds ） | working temperature | ||
| Packaging/Specifications | packing | ||
| Certification Authority | Minimum packaging quantity | ||
| quantity | six thousand | manufacturer | Infineon |
| Product category | MOSFET | RoHS | yes |
| Installation style | SMD/SMT | Packaging/Box | SOT-23-3 |
| Transistor polarity | P-Channel | Number of channels | 1 Channel |
| Vds - drain source breakdown voltage | 20 V | Id - Continuous drain current | 3.7 A |
| Rds On - Leakage Source Conduction Resistance | 65 mOhms | Vgs - gate source voltage | -12 V,+12 V |
| Vgs th gate source threshold voltage | 4 V | Qg gate charge | 8 nC |
| Minimum operating temperature | -55 C | Maximum operating temperature | +150 C |
| Pd - Power dissipation | 1.3 W | Channel mode | Enhancement |
| allocation | Single | height | 1.1 mm |
| length | 2.9 mm | Transistor type | 1.3 mm |
| width | IRLML6402TRPBF SP001552740 | ||
Product Details
Trading Area
Global