Overview
| brand | Dihedron | model | NDGO-1 |
| Batch number | 2283O | encapsulation | NDGO-2 |
| packing | Class 100 clean bag, Class 1000 ultra clean room | Minimum packaging quantity | |
| structure | orthogonal | Cell parameter Å | A=5.43, b=5.50, c=7.71 |
| polishing | Single or double sided | Ra | ≤ 5 Å (5 µ m × 5 µ m) |
| Crystallographic orientation | <100><110><111> | Precision of crystal orientation | ± 0.5 ° |
| melting point | 1600 ℃ | density | 7.57g/cm3 |
| Dielectric constant | twenty-five | Growth method | Tira method |
| size | 10x3, 10x5, 10x10, 15x15, 20x15, 20x20 | thickness | 0.5mm, 1.0mm |
| Edge orientation accuracy | 2 ° (up to 1 ° for special requirements) | Oblique cut wafer | Wafers with edge oriented crystal planes that can be processed according to specific needs and tilted at a specific angle (tilt angle 1 ° -45 °) |
| Saleable land | nationwide | ||
Product Details
NdGaO3 (neodymium galliate) is mainly used as a substrate for the growth of high-temperature superconductors (such as YBCO) and epitaxial films of magnetic materials. Due to the very small lattice mismatch (~0.27%) between NdGaO3 and YBCO and the absence of structural phase transition, high-quality thin films can be epitaxial grown on NdGaO3 substrates.
application
It is mainly used as a substrate for growth of high-temperature superconductors (such as YBCO) and epitaxial films of magnetic materials.
characteristic
The lattice mismatch between gallium neodyate NdGaO3 and YBCO is very small (~0.27%), and there is no structural phase transition. High quality thin films can be epitaxial grown on NdGaO3 substrates.
Gallium neodymium is an excellent dielectric material with high dielectric constant and low loss.
NdGaO3 has excellent thermal stability and can maintain good performance under high temperature conditions.
NdGaO3 is an excellent substrate material, especially suitable for growing films with complex structures, such as perovskite structures.
• NdGaO3 has high crystal quality, complete crystal structure and no obvious Crystallographic defect, which makes it have excellent performance in electronic and optical applications.
NdGaO3 has a wide band gap, which gives it good optical transparency in the ultraviolet region.
