Overview
| brand | Infineon | model | SPP11N80C3 |
| series | CoolMOSC3 | packing | Pipe installation |
| Part status | On sale | application area | |
| input voltage | Output count | ||
| Voltage - Output | working temperature | ||
| Installation type | Packaging/Specifications | ||
| Supplier Device Packaging | Minimum packaging quantity | fifty | |
| encapsulation | PG-TO220-3 | Batch number | 23+ |
| quantity | twenty-six thousand nine hundred and seventy | manufacturer | Infineon |
| Product types | MOSFET | RoHS | yes |
| Installation style | ThroughHole | Packaging/Box | PG-TO-220-3 |
| Number of channels | 1Channel | Transistor polarity | N-Channel |
| Vds - drain source breakdown voltage | 800V | Id - Continuous drain current | 11A |
| RdsOn - Leakage source conduction resistance | 450mOhms | Vgs gate source voltage | 10V |
| Vgsth gate source threshold voltage | 2.1V | Qg - gate charge | 64nC |
| Minimum operating temperature | -55C | Maximum operating temperature | +150C |
| Pd - Power dissipation | 156W | allocation | Single |
| Channel mode | Enhancement | height | 15.65mm |
| length | 10mm | Transistor type | 1N-Channel |
| width | 4.4mm | Descent time | 10ns |
| rise time | 15ns | Typical shutdown delay time | 72ns |
| Typical connection delay time | 25ns | Unit weight | 6g |
Product Details
Trading Area
Global