Overview
| brand | INFINEON | model | IPT007N06N |
| series | OptiMOS5 | packing | |
| Part status | application area | ||
| input voltage | Number of outputs | ||
| Voltage output | working temperature | ||
| Installation type | Packaging/Specifications | ||
| Supplier Device Packaging | Minimum packaging quantity | ||
| encapsulation | PG-HSOF-8-1 | batch | 22+ |
| quantity | twenty-six thousand nine hundred and forty-seven | manufacturer | Infineon |
| Product category | MOSFET | RoHS | yes |
| Installation style | SMD/SMT | Packaging/Box | PG-HSOF-8 |
| Number of channels | 1Channel | Transistor polarity | N-Channel |
| Vds - drain source breakdown voltage | 60V | Id - Continuous drain current | 300A |
| RdsOn - Leakage source conduction resistance | 750uOhms | Vgs gate source voltage | 10V |
| Vgsth gate source threshold voltage | 2.1V | Qg gate charge | 216nC |
| Minimum operating temperature | -55C | Maximum operating temperature | +175C |
| Pd - Power dissipation | 375W | allocation | Single |
| Channel mode | Enhancement | height | 2.4mm |
| length | 10.58mm | Transistor type | 1N-Channel |
| width | 10.1mm | Forward transconductance - minimum value | 160S |
| Fall time | 22ns | rise time | 18ns |
| Typical shutdown delay time | 76ns | Typical connection delay time | 38ns |
Product Details
Trading Area
Global