Overview
| brand | INFINEON | model | IPD90P04P4L-04 |
| encapsulation | TO252 | Batch number | 21+ |
| quantity | six thousand and eight hundred | manufacturer | Infineon |
| Product category | MOSFET | RoHS | yes |
| Installation style | SMD/SMT | Packaging/Box | TO-252-3 |
| Number of channels | 1 Channel | Transistor polarity | P-Channel |
| Vds - drain source breakdown voltage | 40 V | Id - Continuous drain current | 90 A |
| Rds On - Leakage Source Conduction Resistance | 6.6 mOhms | Vgs - gate source voltage | 4.5 V |
| Vgs th gate source threshold voltage | 1.2 V | Qg gate charge | 135 nC |
| Minimum operating temperature | -55 C | Maximum operating temperature | +175 C |
| Pd - Power dissipation | 125 W | allocation | Single |
| Channel mode | Enhancement | qualification | AEC-Q101 |
| height | 2.3 mm | length | 6.5 mm |
| series | OptiMOS-P2 | Transistor type | 1 P-Channel |
| width | 6.22 mm | Fall time | 60 ns |
| rise time | 20 ns | Typical shutdown delay time | 140 ns |
| Typical connection delay time | 20 ns | Unit weight | 4 g |
Product Details
Trading Area
Global