Overview
| brand | Dihedron | model | GAAS-1 |
| Batch number | encapsulation | GAAS-2 | |
| packing | Class 100 clean bag, Class 1000 ultra clean room | Minimum packaging quantity | |
| Crystalline system | cube | Lattice constant | A=5.65A |
| density | 5.31 (g/cm3) | Size (mm) | Commonly used multiple specifications and customization |
| thickness | 0.5mm, 1.0mm | Crystallographic orientation | <100>,<111> |
| doping | None, Si, Cr, Fe, Zn | Conductive type (corresponding) | SI, N, SI, N, P |
| Carrier concentration cm-3 | To level 3 * 10 ^ 18 | polishing | Single or double sided |
| Dislocation density cm-2 | <5 × one hundred and five | Growth method | LEC, HB, etc |
| Main positioning edge | (0-1-1) ± 0.5deg, 16 ± 1.0mm/22 ± 1.0mm/32.5 ± 1.0mm | Secondary positioning edge | (0-11) ± 5.0 deg, 8 ± 1.0mm/11 ± 1.0mm/18 ± 1.0mm |
| Saleable land | nationwide | ||
Product Details
Gallium arsenide (GaAs) is an important Ⅲ - Ⅴ direct band gap semiconductor material with a band gap width of about 1.43 eV. Compared with silicon, GaAs has a higher Electron mobility, which makes it advantageous in manufacturing high-speed electronic devices, such as RF devices and optoelectronic devices.
GaAs crystals have excellent optical properties and can be used to manufacture optoelectronic devices such as lasers, photodiodes, and solar cells. At the same time, because of its high Electron mobility, GaAs is also widely used to manufacture high-speed electronic devices, such as High-electron-mobility transistor (HEMT) and pseudopotential power FET (PHEMT).
Although the preparation process of GaAs crystals is more complex and costly than silicon, their superior performance in high-speed, high-frequency, optoelectronic and other fields has made them widely used in many special applications. In the future, with the progress of preparation processes and the reduction of costs, we can expect the application of GaAs crystals in fields such as high-speed communication, optoelectronics, and solar cells to further expand.
application
-Microwave RF applications: Power amplifiers in mobile phones and wireless network devices.
-Optoelectronic devices: such as solar cells, laser diodes, and photodetectors.
-Integrated circuits: such as electronic switches, signal processors, etc.
characteristic
-High Electron mobility: It is conducive to the manufacturing of high-frequency and high-speed equipment.
-Good optoelectronic characteristics: suitable for the manufacturing of optoelectronic devices.
-Low noise: It has advantages in RF applications.
