Overview
| brand | INFINEON/Infineon | model | IRF5210STRLPBF |
| encapsulation | TO-263 | quantity | two thousand |
| manufacturer | Infineon | Product category | MOSFET |
| Installation style | SMD/SMT | Packaging/Box | TO-263-3 |
| Transistor polarity | P-Channel | Number of channels | 1 Channel |
| Vds - drain source breakdown voltage | 100 V | Id - Continuous drain current | 40 A |
| Rds On - Leakage Source Conduction Resistance | 60 mOhms | Vgs - gate source voltage | -20 V,+20 V |
| Vgs th gate source threshold voltage | 2 V | Qg gate charge | 120 nC |
| Minimum operating temperature | -55 C | Maximum operating temperature | +175 C |
| Pd - Power dissipation | 3.8 W | Channel mode | Enhancement |
| allocation | Single | height | 2.3 mm |
| length | 6.5 mm | Transistor type | 6.22 mm |
| width | IRF5210STRLPBF SP001554020 | ||
Product Details
Trading Area
Global