Overview
| brand | INFINEON/Infineon | model | IRF2807STRLPBF |
| encapsulation | TO-263 | quantity | two thousand |
| manufacturer | Infineon | Product category | MOSFET |
| RoHS | yes | Installation style | SMD/SMT |
| Packaging/Box | TO-263-3 | Transistor polarity | N-Channel |
| Number of channels | 1 Channel | Vds - drain source breakdown voltage | 75 V |
| Id - Continuous drain current | 82 A | Rds On - Leakage Source Conduction Resistance | 13 mOhms |
| Vgs - gate source voltage | -20 V,+20 V | Vgs th gate source threshold voltage | 4 V |
| Qg gate charge | 106.7 nC | Minimum operating temperature | -55 C |
| Maximum operating temperature | +175 C | Pd - Power dissipation | 200 W |
| Channel mode | Enhancement | allocation | Single |
| height | 2.3 mm | length | 6.5 mm |
| Transistor type | 6.22 mm | width | IRF2807STRLPBF SP001564210 |
Product Details
Trading Area
Global