Overview
| brand | INFINEON | model | IRFS4410ZTRLPBF |
| Packaging/Specifications | Transistor type | 6.22mm | |
| Collector current | Collector and emitter breakdown voltage | ||
| Rated power | working temperature | ||
| packing | Minimum packaging quantity | ||
| encapsulation | TO-263-2 | batch | 22+ |
| quantity | twenty-seven thousand and forty-three | manufacturer | Infineon |
| Product category | MOSFET | Installation style | SMD/SMT |
| Packaging/Box | TO-252-3 | Transistor polarity | N-Channel |
| Number of channels | 1Channel | Vds - drain source breakdown voltage | 100V |
| Id - Continuous drain current | 97A | RdsOn - Leakage source conduction resistance | 9mOhms |
| Vgs gate source voltage | -20V,+20V | Vgsth gate source threshold voltage | 4V |
| Qg gate charge | 120nC | Minimum operating temperature | -55C |
| Maximum operating temperature | +175C | Pd - Power dissipation | 230W |
| Channel mode | Enhancement | allocation | Single |
| Fall time | 57ns | Forward transconductance - minimum value | 140S |
| height | 2.3mm | length | 6.5mm |
| rise time | 52ns | width | IRFS4410ZTRLPBFSP001567800 |
| Part Number Alias | 330mg | ||
Product Details
Trading Area
Global