Overview
| brand | INFINEON/Infineon | model | IRF3710PBF |
| encapsulation | TO-220 | quantity | two thousand |
| manufacturer | Infineon | Product category | MOSFET |
| RoHS | yes | Installation style | Through Hole |
| Packaging/Box | TO-220-3 | Transistor polarity | N-Channel |
| Number of channels | 1 Channel | Vds - drain source breakdown voltage | 100 V |
| Id - Continuous drain current | 57 A | Rds On - Leakage Source Conduction Resistance | 23 mOhms |
| Vgs - gate source voltage | -20 V,+20 V | Vgs th gate source threshold voltage | 2 V |
| Qg gate charge | 86.7 nC | Minimum operating temperature | -55 C |
| Maximum operating temperature | +175 C | Pd - Power dissipation | 200 W |
| Channel mode | Enhancement | allocation | Single |
| height | 15.65 mm | length | 10 mm |
| Transistor type | 1 N-Channel | width | 4.4 mm |
| Unit weight | 2 g | ||
Product Details
Trading Area
Global