IRF3710STRLPBF Field-effect transistor INFINEON/Infineon TO-263
IRF3710STRLPBF Field-effect transistor INFINEON/Infineon TO-263
IRF3710STRLPBF Field-effect transistor INFINEON/Infineon TO-263
IRF3710STRLPBF Field-effect transistor INFINEON/Infineon TO-263
IRF3710STRLPBF Field-effect transistor INFINEON/Infineon TO-263
IRF3710STRLPBF Field-effect transistor INFINEON/Infineon TO-263

IRF3710STRLPBF Field-effect transistor INFINEON/Infineon TO-263

$0.00/PCS
Place of Origin
Shenzhen, Guangdong, China
Shipping
Ocean Freight, Land Freight, Air Freight

Product Description

Overview

brand
INFINEON/Infineon
model
IRF3710STRLPBF
encapsulation
TO-263
quantity
two thousand
manufacturer
Infineon Technologies
series
HEXFET ®
FET type
N-channel
Vgs (maximum)
± 20V
Power dissipation (maximum)
200W (Tc)
working temperature
-55 ° C~175 ° C (TJ)
Installation type
Surface mount type
Packaging/Housing
TO-263-3, D ² Pak (2 leads+connectors), TO-263AB
Leakage source voltage (Vdss)
100 V

Product Details

IRF3710STRLPBF Field-effect transistor INFINEON/Infineon TO-263
IRF3710STRLPBF Field-effect transistor INFINEON/Infineon TO-263
IRF3710STRLPBF Field-effect transistor INFINEON/Infineon TO-263

 

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Global

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Phone
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Requirements
Quotation
Guangdong, China
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