Overview
| brand | VISHAY | model | SI2301CDS-T1-GE3 |
| encapsulation | SOT-23 | Batch number | 23+ |
| quantity | ten thousand | manufacturer | Vishay |
| Product category | MOSFET | RoHS | yes |
| Installation style | SMD/SMT | Packaging/Box | SOT-23-3 |
| Transistor polarity | P-Channel | Number of channels | 1 Channel |
| Vds - drain source breakdown voltage | 20 V | Id - Continuous drain current | 3.1 A |
| Rds On - Leakage Source Conduction Resistance | 112 mOhms | Vgs - gate source voltage | -8 V,+8 V |
| Vgs th gate source threshold voltage | 1 V | Qg gate charge | 3.3 nC |
| Minimum operating temperature | -55 C | Maximum operating temperature | +150 C |
| Pd - Power dissipation | 1.6 W | Channel mode | Enhancement |
| series | SI2 | allocation | Single |
| Fall time | 10 ns | rise time | 35 ns |
| Transistor type | 30 ns | Typical shutdown delay time | 11 ns |
| Typical connection delay time | SI2301CDS-T1-BE3 SI2301CDS-GE3 | ||
Product Details
Trading Area
Global