IRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistor
IRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistor
IRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistor
IRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistor
IRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistor
IRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistor

IRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistor

$0.15
Place of Origin
China
Shipping
Air Freight, Ocean Freight, Land Freight

Product Description

Overview

brand
INFINEON
model
IRFBC40PBF
Packaging/Specifications
Transistor type
Collector current
Collector and emitter breakdown voltage
Rated power
working temperature
packing
Tubing
Minimum packaging quantity
fifty
encapsulation
TO-220-3
batch
22+
quantity
twenty-seven thousand and sixty
RoHS
yes
Product category
Electronic components
Minimum operating temperature
-40C
Maximum operating temperature
90C
Minimum power supply voltage
1.5V
Maximum power supply voltage
8V
length
6.3mm
width
9.3mm
height
1mm
Batch number
23+

Product Details

IRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistor

IRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistorIRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistorIRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistorIRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistorIRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistorIRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistorIRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistorIRFBC40PBF 600V 6.2A TO-220 encapsulated N-channel MOS Field-effect transistor

Trading Area

Global

Quotation

Name
Company
Phone
Email Address
Requirements
Quotation
Guangdong, China
Chat
Distributor
Messages