Overview
| brand | INFINEON | model | IRF530NPBF |
| Packaging/Specifications | Transistor type | 1N-Channel | |
| Collector current | Collector and emitter breakdown voltage | ||
| Rated power | working temperature | ||
| packing | Minimum packaging quantity | ||
| encapsulation | TO-220-3 | batch | 22+ |
| quantity | twenty-six thousand nine hundred and sixty-six | manufacturer | Infineon |
| Product category | MOSFET | RoHS | yes |
| Installation style | ThroughHole | Packaging/Box | TO-220-3 |
| Transistor polarity | N-Channel | Number of channels | 1Channel |
| Vds - drain source breakdown voltage | 100V | Id - Continuous drain current | 17A |
| RdsOn - Leakage source conduction resistance | 90mOhms | Vgs gate source voltage | -20V,+20V |
| Vgsth gate source threshold voltage | 2V | Qg gate charge | 24.7nC |
| Minimum operating temperature | -55C | Maximum operating temperature | +175C |
| Pd - Power dissipation | 79W | Channel mode | Enhancement |
| allocation | Single | height | 15.65mm |
| length | 10mm | width | 4.4mm |
| Unit weight | 6g | ||
Product Details
Trading Area
Global