EVAL_ 1EDF_ G1_ HB_ GAN Evaluation Board Infineon Technologies

Infineon EVAL_ 1EDF_ G1_ HB_ The GAN evaluation board provides a platform for evaluating GaNs using a universal half bridge topology. The general topology can be configured for boost or buck operation, pulse testing, or continuous full power operation. Therefore, this evaluation board can be used to build almost all converter and inverter applications. EVAL_ 1EDF_ G1_ HB_ The GAN evaluation board supports easy and fast setup and testing of CoolGANtm. The board has a Test point that can be easily accessed to connect the signal to the oscilloscope and measure CoolGaN ™ Switching performance of transistors and gate drivers. This device can save users time, allowing them to not have to worry about their own gate driver and power circuit design.

EVAL_ 1EDF_ G1_ HB_ GAN is powered by a 5V single power input and has a single PWM input for connecting to a 50 Ω pulse generator. The half bridge circuit board can switch 12A continuous current and 35A peak current in hard or soft switching mode. The working frequency can reach several MHz, depending on the power consumption of the transistor.

characteristic

Simple GaN half bridge with dedicated GaN driver IC

Capable of achieving multiple MHz switching frequencies

Zero reverse recovery - can switch between hard or soft switches

GaN transistors use top cooling for high power consumption

Easy to set up and use

Multiple configurations available for selection

Evaluate the high-frequency capability of GaN

Evaluate waveforms with low ringing, overshoot, and EMI

Can be easily evaluated at power levels of several kilowatts

application

Converter and inverter applications