Overview
| brand | IXYS | model | IXTT1N450HV |
| quantity | ten thousand | manufacturer | IXYS |
| Product types | MOSFET | RoHS | yes |
| technology | Si | Installation style | SMD/SMT |
| Packaging/Box | TO-268-3 | Transistor polarity | N-Channel |
| Number of channels | 1 Channel | Vds - drain source breakdown voltage | 4.5 kV |
| Id - Continuous drain current | 3 A | Rds On - Leakage source conduction resistance | 80 Ohms |
| Vgs gate source voltage | -20 V,+20 V | Vgs th gate source threshold voltage | 3.5 V |
| Qg - gate charge | 46 nC | Minimum operating temperature | -55 C |
| Maximum operating temperature | +150 C | Pd - Power dissipation | 520 W |
| Channel mode | Enhancement | encapsulation | Tube |
| allocation | Single | series | IXTT1N450 |
| Transistor type | 1 N-Channel | trademark | IXYS |
| Forward transconductance - minimum value | 0.4 S | Descent time | 120 ns |
| Humidity sensitivity | Yes | product type | MOSFET |
| rise time | 43 ns | Factory packaging quantity | thirty |
| Subcategories | MOSFETs | Typical shutdown delay time | 73 ns |
| Typical connection delay time | 30 ns | Unit weight | 6.500 g |
Product Details
Lansheng Technology Limited
B3011, Jiahe Huaqiang Building, No 3006, Shennan Middle Rd
Futian Dist, Shenzhen, China 518028
Contact: William LEE
Email:william@lanshengic.com
Mobile:+86-19168537840
Wechat:+86-19168537840
W/app:+86-19168537840
Trading Area
Global