IXFN44N80P electronic component IXYS

brand	IXYS	model	IXFN44N80P
quantity	ten thousand	manufacturer	IXYS
Product types	MOSFET	RoHS	yes
Installation style	Chassis Mount	Packaging/Box	SOT-227-4
Number of channels	1 Channel	Transistor polarity	N-Channel
Vds - drain source breakdown voltage	800 V	Id - Continuous drain current	39 A
Rds On - Leakage source conduction resistance	190 mOhms	Vgs gate source voltage	30 V
Vgs th gate source threshold voltage	5 V	Qg - gate charge	200 nC
Minimum operating temperature	-55 C	Maximum operating temperature	+150 C
Pd - Power dissipation	694 W	allocation	Single
Channel mode	Enhancement	height	12.22 mm
length	38.23 mm	series	HiPerFET
Transistor type	1 N-Channel	width	25.42 mm
Forward transconductance - minimum value	27 S	Descent time	27 ns
rise time	22 ns	Typical shutdown delay time	75 ns
Typical connection delay time	28 ns	Unit weight	30 g