IPB180N10S402ATMA1 Electronic Component Infineon

brand	Infineon	model	IPB180N10S402ATMA1
quantity	ten thousand	manufacturer	Infineon
Product types	MOSFET	RoHS	yes
Installation style	SMD/SMT	Packaging/Box	PG-TO-263-7
Transistor polarity	N-Channel	Number of channels	1 Channel
Vds - drain source breakdown voltage	100 V	Id - Continuous drain current	180 A
Rds On - Leakage source conduction resistance	2.5 mOhms	Vgs gate source voltage	10 V
Vgs th gate source threshold voltage	2 V	Qg - gate charge	156 nC
Minimum operating temperature	-55 C	Maximum operating temperature	+175 C
Pd - Power dissipation	300 W	Channel mode	Enhancement
qualification	AEC-Q101	allocation	Single
height	4.4 mm	length	10 mm
series	IPB180N10	Transistor type	1 N-Channel
width	9.25 mm	Descent time	40 ns
rise time	9 ns	Typical shutdown delay time	30 ns
Typical connection delay time	15 ns	Unit weight	1.600 g