Overview
| brand | Dihedral technology | model | SiC-1 |
| Batch number | 03m2000 | encapsulation | SiC-2 |
| packing | Class 100 clean bag, Class 1000 ultra clean room | Minimum packaging quantity | 1 piece |
| Crystalline system | Hexagonal | band gap | 2.93 eV (indirect) |
| Lattice constant | A=3.08 Å c=15.08 Å | Sort order | ABCACB |
| hardness | 9.2 (mohs) | Dielectric constant | E (11)=e (22)=9.66 e (33)=10.33 |
| Size 1 (mm) | 10x5, 10x10, 15x15, 20x15, 20x20, dia2 ", etc | thickness | 0.5-1.0mm |
| Crystallographic orientation | <001>± 0.5 º | polishing | Single or double sided |
| Precision of crystal orientation | ± 0.5 ° | Edge orientation accuracy | 2 ° (up to 1 ° for special requirements) |
| Oblique cut wafer | Wafers with edge oriented crystal planes that can be processed according to specific needs and tilted at a specific angle (tilt angle 1 ° -45 °) | Roughness Ra | ≤ 5 Å (5 µ m × 5 µ m) |
| Saleable land | nationwide | ||
Product Details
Silicon carbide (SiC) is a unique semiconductor material with some excellent physical properties. It has attracted widespread attention due to its single crystal structure, unique performance advantages, wide applications, and broad development prospects.
In terms of structure, silicon carbide single crystals mainly have various crystal polymorphisms, including 3C-SiC, 4H-SiC, 6H-SiC, etc. These different crystal structures have their own unique properties. Among them, 4H SiC and 6H SiC are widely used due to their excellent electronic properties and high thermal conductivity.
The performance advantages of silicon carbide mainly include wide band gap, high Electron mobility, strong thermal stability, good chemical stability and excellent thermal conductivity. Among them, the wide bandgap enables SiC to have high electron penetration ability, which is conducive to operating in harsh environments such as high temperature, high pressure, and high frequency. High Electron mobility and thermal conductivity make SiC have good switching performance and heat dissipation performance.
Silicon carbide has a wide range of applications, including power electronics, optoelectronics, high-temperature electronics, automotive electronics, etc. For example, SiC can be used as the basic material for power devices for power conversion and regulation, greatly improving energy efficiency. In the field of optoelectronics, SiC is used to make solar cells due to its ability to withstand extreme environments. In addition, SiC is also widely used in power conversion systems for electric and hybrid vehicles, bringing significant energy efficiency improvements.
The development prospects of silicon carbide are very broad. With the continuous development of technology, the production cost of SiC is gradually decreasing, making it more widely used in various fields. In emerging fields such as new energy vehicles, wind power, and solar power generation, the application of silicon carbide will also be more widely carried out. Meanwhile, with the higher requirements for efficiency in power electronic equipment, the excellent performance of SiC has enormous potential for its application in these fields. Overall, silicon carbide, as an excellent semiconductor material, will have more extensive and in-depth applications in the future.
