Overview
| brand | Dihedron | model | MO001 |
| Batch number | 84765r | encapsulation | MO002 |
| packing | Class 100 clean bag, Class 1000 ultra clean room | Minimum packaging quantity | one |
| Crystalline system | cube | melting point | 2800 (℃) |
| purity | >99.99% | density | 3.58 (g/cm3) |
| hardness | 5.5 (mohs) | Coefficient of thermal expansion | 11.2x10-6 (/℃) |
| Cleavage surface | <100> | Optical transmittance | >90% (200-1000nm) |
| Dielectric constant | ε= nine point six five | Thermal conductivity | 36 W/m.k @ 300 ° K |
| size | 5x5->30x30mm Ø 50.8mm, etc | thickness | 0.5mm, 1.0mm |
| polishing | Single or double sided | Crystallographic orientation | <001><110><111> |
| Roughness Ra | ≤ 5 Å (5 µ m × 5 µ m) | Saleable land | nationwide |
Product Details
Magnesium oxide (MgO) is a Ionic crystal with cubic lattice, and its structure is similar to sodium chloride (NaCl). The lattice parameters of magnesium oxide are close to those of metals such as iron (Fe), nickel (Ni), and cobalt (Co), which allows magnesium oxide to serve as a substrate for these metal films.
In terms of physical and chemical properties, magnesium oxide has good transparency and can transmit a broadband spectrum from ultraviolet to infrared. In addition, it has high dielectric strength, thermal stability, and chemical stability, as well as high hardness. These characteristics make magnesium oxide widely used in many fields, especially as a thin film substrate.
The application of magnesium oxide in thin film substrates mainly stems from its structure and physical and chemical properties. Because it has a Lattice constant similar to some important metal elements, it can effectively reduce the lattice mismatch problem in the film growth process, so that better quality films can be obtained. For example, nickel (Ni) and iron (Fe) used for making ferromagnetic films can form high-quality single crystal films on magnesium oxide.
In addition, magnesium oxide substrates are also widely used in semiconductor devices. Due to its high dielectric constant, it can be used as a gate dielectric in metal oxide semiconductor (MOS) devices to improve device performance. MgO is also used as the substrate of High-temperature superconductivity thin films because its lattice structure is similar to some High-temperature superconductivity materials, which is conducive to the growth of thin films.
Due to its excellent performance in multiple fields, it is expected that magnesium oxide will continue to expand its application range in the future, especially in the fields of new materials and new energy.
application
▪ Magnetic thin film
▪ Semiconductor thin film
▪ Optical thin film
▪ High-temperature superconductivity thin films
characteristic
Magnesium oxide (MgO) crystals have high crystal integrity, making them an ideal substrate for many thin film growth.
MgO crystals have a very high melting point (approximately 2800 ° C) and good chemical stability, enabling them to maintain stability under high temperatures and harsh environments.
The large band width of MgO (about 7.8 eV) makes it widely used in insulators and dielectric materials.
The crystal structure of MgO has good compatibility with some important thin film materials such as nickel ferrite and magnesium oxide, which is crucial for the growth and performance of the thin film.
Due to its excellent transparency and refractive index, MgO is often used as an optical component and coating material.
