Overview
| brand | Onsemi | model | MMBT3904LT1G |
| Packaging/Specifications | Transistor type | ||
| Collector current | Collector and emitter breakdown voltage | ||
| Collector cut-off current (Icbo) | Collector emitter saturation voltage (VCE (sat) @ Ic, Ib) | ||
| DC current gain（ hFE@Ic Vce | characteristic frequency | ||
| working temperature | packing | ||
| Minimum packaging quantity | quantity | six hundred and thirty-nine thousand | |
| manufacturer | Onsemi | Product category | Bipolar Transistor - Bipolar Junction Transistor (BJT) |
| RoHS | yes | Installation style | SMD/SMT |
| Packaging/Box | SOT-23-3 | Transistor polarity | NPN |
| allocation | Single | Collector base voltage VCBO | 60 V |
| Emitter base voltage VEBO | 6 V | Collector emitter saturation voltage | 300 mV |
| Maximum DC collector current | 200 mA | Pd - Power dissipation | 225 mW |
| Gain bandwidth product fT | 300 MHz | Minimum operating temperature | -55 C |
| Maximum operating temperature | +150 C | series | MMBT3904L |
| Continuous current of collector | 0.2 A | height | 0.94 mm |
| length | 2.9 mm | width | 30 mg |
Product Details
Trading Area
Global